French firm IPDiA, developing 3D silicon passive components, has introduced silicon capacitors for high voltage and high temperature applications.Compared with multi-layer ceramic capacitor (MLCC), the MOS technology used by IPDiA offers a reliability of 84,000 hours operation at 250°C.
The 3D structure offers a density of 250nF/mm².IPDiA 250°C silicon capacitors can achieve 100nF in a 0402 package, when 10x10nF capacitors in 0603 mounted in parallel are required with a Type I dielectric such as NPO.
The range offers values from 10pF up to 4.7µF, with breakdown voltages from 11V to 450V, exceeding the overall electrical performance of NPOs or X7Rs thanks to capacitance stability over temperature (60 ppm/°C), voltage and time.
The silicon capacitor range has been designed to be mounted in high temperature MCMs, with aluminum pads to be compliant with wedge aluminum bonding.
According to the company this assembly process addresses issues encountered previously when using hybrid processes (ICs die & SMT ceramics), hence decreasing overall assembly costs.
